Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown
Tuesday publication post! In this publication from the #UniversityofMinnesota and #UniversityofArizona, the authors have used our #FusionAX to look at MRAM devices by doing electrical biasing in the electron microscope with atomic resolution! As computing technology advances, demand for efficient data storage solutions is growing. Spintronic magnetic tunnel junction (MTJ)-based MRAM devices are emerging as … Read More