Tuesday publication post! In this newest publication using the #FusionAX system, authors were using in situ electrical biasing within TEM to study electronic device formation! They visualized the formation of nanowires for field-effect transistors (FETs) in real time and at atomic resolution. The findings revealed that Mo₆Te₆ NWs form only along specific directions within the MoTe₂ matrix.
⚡ Electrical bias near the graphite-MoTe₂ interface drives the conversion process,
Graphite layers guide the directional growth, as confirmed by first-principles calculations.
Leveraging this strategy, the authors fabricated oriented NWs as lateral contact electrodes in 2H-MoTe₂ FETs
These breakthroughs pave the way for scalable, direct metal-phase patterning to create flexible, efficient interconnections for the future of 2D nanoelectronics.
In the video we can see the formation of these nanowires in real time!
Want to read the entire publication?
Find it here!
https://www.doi.org/10.1038/s41467-024-50525-4
#FindYourBreakthrough #Protochips #InSituElectronicDevices
