Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

Tuesday publication post! In this publication from the #UniversityofMinnesota and #UniversityofArizona, the authors have used our #FusionAX to look at MRAM devices by doing electrical biasing in the electron microscope with atomic resolution!

As computing technology advances, demand for efficient data storage solutions is growing. Spintronic magnetic tunnel junction (MTJ)-based MRAM devices are emerging as a promising alternative to traditional memory devices. To ensure their successful application, understanding both their working principles and breakdown mechanisms is essential.

⚡Using Fusion AX from Protochips, these authors conducted in situ electrical biasing with atomic-resolution STEM to explore two distinct breakdown mechanisms in MTJ devices. At low electric currents, soft breakdown occurs due to electromigration, forming ultrathin regions in the MgO dielectric layer and edge conducting paths, reducing device resistance. At higher currents, complete breakdown results from joule heating and electromigration, melting MTJ layers at temperatures below their bulk melting points.

These time-resolved, atomic-scale STEM studies provide crucial insights into the structural evolution of spintronic devices, advancing our understanding of their operational limits and potential failure points.

Want to read the entire paper?
Find it here!
https://www.doi.org/10.1021/acsnano.4c08023

Want to know about our Fusion AX solution for electronic devices?
https://www.protochips.com/solutions/by-applications/electronic-devices/

The video shows the migration of MgO atoms under biasing conditions.

#FusionAX #InSituMicroscopy #Spintronics #MRAM #MagneticTunnelJunctions #STEM #Nanotechnology #DataStorage #Electromigration #DeviceBreakdown #Protochips #FindYourBreakthrough